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CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 1/4
BTD2568L3
Features
* High BVCEO, 400V minimum
Symbol
BTD2568L3
Outline
SOT-223
C
E
BBase CCollector EEmitter
C B
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation @TC=25C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB Pd Tj Tstg Limits 400 400 6 300 1 200 5 150 -55~+150 Unit V V V mA A mA W C C
BTD2568L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on) hFE1 hFE2 *hFE3 *hFE4 fT Cob Min. 400 400 6 50 100 100 40 50 Typ. 3.5 Max. 100 100 100 0.2 0.4 0.8 0.9 0.9 250 250 Unit V V V nA nA nA V V V V V MHz pF
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 2/4
Test Conditions IC=100A IC=1mA IE=10A VCB=400V VCE=360V VEB=5V IC=20mA, IB=2mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=10V, IC=50mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=10V, IC=10mA VCB=20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
BTD2568L3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 10000 VCESAT
VCE=10V
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 3/4
Saturation Voltage vs Collector Current
Saturation Voltage-(mV
H Current Gain--- FE
1000
IC=30IB
100
VCE=5V
100
IC=20IB IC=10IB
10 1 10 100 1000 Collector Current ---IC(mA)
10 1 10 100 1000 Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
10000 6 Power Dissipation---PD(W 5 4 3 2 1 100 1 10 100 1000 Collector Current--- IC(mA) 0 0
Power Derating Curve
Saturation Voltage-(mV
VBESAT@IC=10IB
1000
50
100
150
200
Ambient Temperature---TA()
BTD2568L3
CYStek Product Specification
CYStech Electronics Corp.
SOT-223 Dimension
A
Spec. No. : C211L3 Issued Date : 2004.11.18 Revised Date : 2005.03.25 Page No. : 4/4
Marking:
B 1 2 3
C
CE
D E F G H a1 I a2
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638
Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70
DIM G H I a1 a2
Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 o *13 0o 10 o
Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 o *13 0o 10 o
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2568L3
CYStek Product Specification

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